Nanowire Templated Lateral Epitaxial Growth of Low Dislocation Density GaN
Investigating Organization
Sandia National Laboratories
Principal Investigator(s)
George T. Wang
Subcontractor
None
Funding Source
Building Technologies Program/NETL
Award
DOE Share: $616,000
Contract Period
09/18/06 - 04/30/08
This project proposes to develop inexpensive and low defect density GaN substrates enabling higher efficiency LED devices. This goal is to be accomplished by developing growth techniques for GaN nanowires which are then induced to grow laterally and coalesce into a high quality planar film.