Novel Low-Cost Technology for Solid-State Lighting (Phase I)
Investigating Organization
Technologies and Devices International
Principal Investigator(s)
A. Usikov
Subcontractor
None
Funding Source
Small Business Innovation Research
Award
DOE Share: $99,976
Contract Period
7/1/03 - 4/30/04
The work of Technologies and Devices International focuses on demonstrating a novel epitaxial technology with substantially reduced process cost for fabrication group-III nitride epitaxial structures for white light emitting diodes. The technology is based on hydride vapor phase epitaxy (HVPE) of AlGaN/GaN light emitting structures.
For group-III nitride semiconductors, HVPE is known to be a low-cost method for fabrication of thick quasi-bulk GaN materials, GaN-on-sapphire, and AlN-on-sapphire templates used as substrates for device fabrication. The Phase I objective is to extend HVPE cost-effective epitaxial technology for the fabrication of white light emitting devices. Al(In)GaN-based blue ultra violet emitters fabricated by HVPE technology for lighting applications will be demonstrated.
This technology will also provide a number of technological advantages for the growth of high-efficient blue and UV light-emitting structures. General lighting devices will be fabricated by packaging the blue or UV LEDs with a white light conversion phosphor blend. Potential applications include residential general illumination, aviation, and hazard indicators.
The researchers have also designed light emitting structures and investigated material deposition HVPE technology. A novel HVPE method has grown two sets of epitaxial materials. Grown samples are under characterization. The next step will be to grow p-type AlGaN layers, and to fabricate structures for blue-UV LED dies processing and delivery of pn structures for phosphorous deposition.