Ultra High p-Doping Materials Research for GaN Based Light Emitters
Investigating Organization
Technologies and Devices International
Principal Investigator(s)
Vladimir Dmitriev
Subcontractor
None
Funding Source
Building Technologies Program/NETL
Award
DOE Share: $600,000; Contractor Share: $150,000
Contract Period
06/26/06 - 06/30/07
Project Summary
The objective is to develop novel technology of ultra highly doped (hole concentration at room temperature, p >1019 cm-3) p-type GaN layers and AlGaN/GaN heterostructures for lighting applications. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. High p-type doping is required to improve (i) carrier injection efficiency in light emitting pn junctions, (ii) current spreading in light emitting structures, and (iii) parameters of ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high power high efficiency GaN-based light emitters. The project is focused on material research for highly doped p-type GaN materials and device structures for applications in high efficiency light emitters for general illumination.